ME60P06T-G - Matsuki

ME60P06T-G P-Channel MOSFET

The ME60P06T is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION (TO-220) Top View ME60P06T/ME60P06T-G FEATURES ● RDS(ON)≦16.5mΩ@VGS=-10V ● RDS(ON)≦20.5mΩ@VGS=-4.5V ● Super high .

Features

● RDS(ON)≦16.5mΩ@VGS=-10V
● RDS(ON)≦20.5mΩ@VGS=-4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management in Note book
● DC/DC Converter
● Load Switch
● LCD Display inverter Ordering Information: ME60P06T (Pb-free) ME60P06T-G (Green product-Halogen free ) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
* TC=25℃ TC=70℃ Pulsed Drain Current Maximum Power Dissipation
* TC=25℃ TC=70℃ Operating Junction Tempera.