ME60N04T-G - Matsuki

ME60N04T-G N-Channel MOSFET

The ME60N04T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURES ● RDS(ON)≦12mΩ@VGS=10V ● RDS(ON)≦17mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON).

Features

● RDS(ON)≦12mΩ@VGS=10V
● RDS(ON)≦17mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management
● DC/DC Converter
● Load Switch (TO-220) Top View
* The Ordering Information: ME60N04T (Pb-free) ME60N04T-G (Green product-Halogen free) Absolute Maximum(GrReeantpinrogdusct()TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25℃ TC=70℃ Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ Operating Junction Temperature Th.