MDP1922 - MagnaChip

MDP1922 Single N-channel MOSFET

The MDP1922 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1922 is suitable device for DC/DC Converter and general purpose applications. Features  VDS = 100V  ID = 97A @VGS = 10V  RDS(ON) < 8.4 mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested.

Features

 VDS = 100V  ID = 97A @VGS = 10V  RDS(ON) < 8.4 mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D GDS TO-220 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC TC=100oC Power Dissipation Single Pulse Avalanche Energy TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Jul. 2021. Rev 1.6 1 G S Symbol VDSS VGSS ID IDM PD EAS(2) TJ, Tstg Symbol RθJA.