MDP1921 - MagnaChip

MDP1921 Single N-channel MOSFET

The MDP1921 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1921 is suitable device for DC/DC Converter and general purpose applications. Features  VDS = 100V  ID = 120A @VGS = 10V  RDS(ON) < 4.5 mΩ @VGS = 10V  100% UIL Tested  100% Rg Teste.

Features

 VDS = 100V  ID = 120A @VGS = 10V  RDS(ON) < 4.5 mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D TO-220 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Jan. 2021. Version 1.3 1 G S Symb.