MDP1930 - MagnaChip

MDP1930 N-Channel MOSFET

The MDP1930 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1930 is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 80V  ID = 120A @VGS = 10V  RDS(ON) < 2.5 mΩ @VGS = 10V  100% UIL Tes.

Features

 VDS = 80V  ID = 120A @VGS = 10V  RDS(ON) < 2.5 mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D TO-220 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited) TC=100oC (Package Limited) Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-t.