The MDP1901 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1901 is suitable device for DC/DC Converters and general purpose applications. Features VDS = 100V ID = 36A @VGS = 10V RDS(ON) < 22mΩ @VGS = 10V < 25mΩ @VGS = 6.0V D GDS G S Abs.
VDS = 100V ID = 36A @VGS = 10V RDS(ON) < 22mΩ @VGS = 10V < 25mΩ @VGS = 6.0V D GDS G S Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case TC=25oC TC=100oC TC=25oC TC=100oC Jan. 2021. v1.4 1 Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating Unit 100 V ±20 V 36 A 24 A 14.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MDP1921 |
MagnaChip |
Single N-channel MOSFET | |
2 | MDP1921 |
INCHANGE |
N-Channel MOSFET | |
3 | MDP1922 |
MagnaChip |
Single N-channel MOSFET | |
4 | MDP1922 |
INCHANGE |
N-Channel MOSFET | |
5 | MDP1922TH |
INCHANGE |
N-Channel MOSFET | |
6 | MDP1923 |
MagnaChip |
Single N-channel MOSFET | |
7 | MDP1923TH |
INCHANGE |
N-Channel MOSFET | |
8 | MDP1930 |
MagnaChip |
N-Channel MOSFET | |
9 | MDP1932 |
MagnaChip |
Single N-channel Trench MOSFET | |
10 | MDP1933 |
MagnaChip |
Single N-channel Trench MOSFET | |
11 | MDP1991 |
MagnaChip |
N-channel MOSFET | |
12 | MDP10N027 |
MagnaChip |
Single N-channel Trench MOSFET |