MDP1991 - MagnaChip

MDP1991 N-channel MOSFET

The MDP1991 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1991 is suitable device for DC/DC Converter and general purpose applications. Features  VDS = 100V  ID = 120A @VGS = 10V  RDS(ON) < 5.9 mΩ @VGS = 10V D GD S TO-220 Absolute Maximum .

Features

 VDS = 100V  ID = 120A @VGS = 10V  RDS(ON) < 5.9 mΩ @VGS = 10V D GD S TO-220 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Jan. 2021 Ver.1.2 1 G S Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg .