Features The MDP10N027TH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications. VDS = 100V ID .
The MDP10N027TH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications. VDS = 100V ID = 120A @VGS = 10V Very low on-resistance RDS(ON) < 2.8 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested D G D S TO-220 Absolute Maximum Ratings (TJ = 25 oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MDP10N027 |
MagnaChip |
Single N-channel Trench MOSFET | |
2 | MDP10N055 |
MagnaChip |
Single N-channel MOSFET | |
3 | MDP10N055 |
INCHANGE |
N-Channel MOSFET | |
4 | MDP10N055TH |
MagnaChip |
N-Channel MOSFET | |
5 | MDP10N50 |
MagnaChip |
N-Channel MOSFET | |
6 | MDP10N60G |
MagnaChip |
N-Channel MOSFET | |
7 | MDP10N60GTH |
INCHANGE |
N-Channel MOSFET | |
8 | MDP11N60 |
MagnaChip |
N-Channel MOSFET | |
9 | MDP12N50 |
MagnaChip |
N-Channel MOSFET | |
10 | MDP12N50B |
MagnaChip |
N-Channel MOSFET | |
11 | MDP12N50F |
MagnaChip |
N-Channel MOSFET | |
12 | MDP13N50 |
MagnaChip |
N-Channel MOSFET |