MDP1922TH - INCHANGE

MDP1922TH N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications INCHANGE Semiconductor MDP1922TH ·ABSOL.

Features

·With TO-220 packaging
·High speed switching
·Very high commutation ruggedness
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·PFC stages
·LCD & PDP TV
·Power supply
·Switching applications INCHANGE Semiconductor MDP1922TH
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 97 61 384 PD Total Dissipation 157 Tj Operating Junction Temperature -55~150 Tstg.