. . . . 9 Signal descriptions . . . . . 17 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 www.DataSheet4U.com Address inputs (ADQ0-ADQ15, A16-Amax) . . . . ..
■
Supply voltage
– VDD = 1.7 V to 2 V for Program, Erase and Read
– VDDQ = 1.7 V to 2 V for I/O buffers
– VPP = 9 V for fast Program Multiplexed address/data Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 86 MHz
– Random Access: 60 ns, 70 ns Synchronous Burst Read Suspend Programming time
– 10 µs by Word typical for Factory Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options Memory blocks
– Multiple Bank memory array: 4 Mbit Banks
– Parameter Blocks (top or bottom location) Dual operations
– Program Erase in one Bank while Read in others
– No dela.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M58WR064KB |
Micron |
64Mb Multi Bank Burst Flash memories | |
2 | M58WR064KT |
Micron |
64Mb Multi Bank Burst Flash memories | |
3 | M58WR064KU |
ST Microelectronics |
Flash memories | |
4 | M58WR064B |
STMicroelectronics |
FLASH MEMORY | |
5 | M58WR064EB |
ST Microelectronics |
64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory | |
6 | M58WR064ET |
ST Microelectronics |
64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory | |
7 | M58WR064HB |
ST Microelectronics |
1.8 V supply Flash memories | |
8 | M58WR064HT |
ST Microelectronics |
1.8 V supply Flash memories | |
9 | M58WR064T |
STMicroelectronics |
FLASH MEMORY | |
10 | M58WR016KL |
ST Microelectronics |
Flash memories | |
11 | M58WR016KU |
ST Microelectronics |
Flash memories | |
12 | M58WR032EB |
ST Microelectronics |
Flash Memory |