M58WR064KB - Micron

M58WR064KB 64Mb Multi Bank Burst Flash memories

M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Features M58WRxxxKT/B - 32Mb & 64Mb, 1.8V, x16 Multi Bank Burst, Flash M58WR032KT, M58WR064KT, M58WR032KB, M58WR064KB Features • Supply voltage – VDD = 1.7V to 2V for PROGRAM, ERASE and READ – VDDQ = 1.7V to 2V for I/O buffers – VPP = 9V for fast program • SYCHRONOUS/ASYCHRONOUS READ – SYCHRONOUS .

Features

M58WRxxxKT/B - 32Mb & 64Mb, 1.8V, x16 Multi Bank Burst, Flash M58WR032KT, M58WR064KT, M58WR032KB, M58WR064KB Features
• Supply voltage
  – VDD = 1.7V to 2V for PROGRAM, ERASE and READ
  – VDDQ = 1.7V to 2V for I/O buffers
  – VPP = 9V for fast program
• SYCHRONOUS/ASYCHRONOUS READ
  – SYCHRONOUS BURST READ mode: 66 MHz
  – Asynchronous/synchronous page READ mode
  – Random access times: 70ns
• SYCHRONOUS BURST READ SUSPEND
• Programming time
  – 10µs by word typical for fast factory program
  – Double/quadruple word program option
  – Enhanced factory program options
• Memory blocks
  – Multiple bank memory array.