M58WR032EB - ST Microelectronics

M58WR032EB Flash Memory

. . . . . 7 Figure 2. Table 1. Figure 3. Table 2. Figure 4. Logic Diagram . . . . 8 Signal Names . . . . . ..

Features

SUMMARY
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■ SUPPLY VOLTAGE
  – VDD = 1.65V to 2.2V for Program, Erase and Read
  – VDDQ = 1.65V to 3.3V for I/O Buffers
  – VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ
  – Synchronous Burst Read mode: 54MHz
  – Asynchronous/ Synchronous Page Read mode
  – Random Access: 70, 80, 100ns PROGRAMMING TIME
  – 8µs by Word typical for Fast Factory Program
  – Double/Quadruple Word Program option
  – Enhanced Factory Program options MEMORY BLOCKS
  – Multiple Bank Memory Array: 4 Mbit Banks
  – Parameter Blocks (Top or Bottom location) DUAL OPERATIONS
  – Pr.