M58WR064KL |
Part Number | M58WR064KL |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | ..... 9 Signal descriptions... . . . . ... |
Features |
■ Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers – VPP = 9 V for fast Program Multiplexed address/data Synchronous / Asynchronous Read – Synchronous Burst Read mode: 86 MHz – Random Access: 60 ns, 70 ns Synchronous Burst Read Suspend Programming time – 10 µs by Word typical for Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options Memory blocks – Multiple Bank memory array: 4 Mbit Banks – Parameter Blocks (top or bottom location) Dual operations – Program Erase in one Bank while Read in others – No dela... |
Document |
M58WR064KL Data Sheet
PDF 1.07MB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M58WR064KB |
Micron |
64Mb Multi Bank Burst Flash memories | |
2 | M58WR064KT |
Micron |
64Mb Multi Bank Burst Flash memories | |
3 | M58WR064KU |
ST Microelectronics |
Flash memories | |
4 | M58WR064B |
STMicroelectronics |
FLASH MEMORY | |
5 | M58WR064EB |
ST Microelectronics |
64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory |