M58WR064EB - ST Microelectronics

M58WR064EB 64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory

. . . . . 6 Figure 2. Logic Diagram . . . . 7 Table 1. Signal Names . . .

Features

SUMMARY s SUPPLY VOLTAGE
  – VDD = 1.65V to 2.2V for Program, Erase and Read
  – VDDQ = 1.65V to 3.3V for I/O Buffers
  – VPP = 12V for fast Program (optional) s Figure 1. Package SYNCHRONOUS / ASYNCHRONOUS READ
  – Synchronous Burst Read mode: 54MHz
  – Asynchronous/ Synchronous Page Read mode
  – Random Access: 70, 80, 100 ns FBGA s PROGRAMMING TIME
  – 8µs by Word typical for Fast Factory Program
  – Double/Quadruple Word Program option
  – Enhanced Factory Program options VFBGA56 (ZB) 7.7 x 9 mm s MEMORY BLOCKS
  – Multiple Bank Memory Array: 4 Mbit Banks
  – Parameter Blocks (Top or Bottom location) s E.