. . . . 8 Signal descriptions . . . . . 13 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 2.13 2.14 2.15 Address inputs (A0-A21) . . . . . ..
■
Supply voltage
– VDD = 1.7 V to 2 V for program, erase and read
– VDDQ = 1.7 V to 2.24 V for I/O buffers
– VPP = 12 V for fast program (optional) Synchronous/asynchronous read
– Synchronous burst read mode: 66 MHz
– Asynchronous/synchronous page read mode
– Random access: 60 ns, 70 ns Synchronous burst read suspend Programming time
– 8 µs by word typical for fast factory program
– Double/quadruple word program option
– Enhanced factory program options Memory blocks
– Multiple bank memory array: 4 Mbit banks
– Parameter blocks (top or bottom location) Dual operations
– Program erase in one b.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M58WR064HT |
ST Microelectronics |
1.8 V supply Flash memories | |
2 | M58WR064B |
STMicroelectronics |
FLASH MEMORY | |
3 | M58WR064EB |
ST Microelectronics |
64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory | |
4 | M58WR064ET |
ST Microelectronics |
64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory | |
5 | M58WR064KB |
Micron |
64Mb Multi Bank Burst Flash memories | |
6 | M58WR064KL |
ST Microelectronics |
Flash memories | |
7 | M58WR064KT |
Micron |
64Mb Multi Bank Burst Flash memories | |
8 | M58WR064KU |
ST Microelectronics |
Flash memories | |
9 | M58WR064T |
STMicroelectronics |
FLASH MEMORY | |
10 | M58WR016KL |
ST Microelectronics |
Flash memories | |
11 | M58WR016KU |
ST Microelectronics |
Flash memories | |
12 | M58WR032EB |
ST Microelectronics |
Flash Memory |