M58WR016KL - ST Microelectronics

M58WR016KL Flash memories

. . . . 9 Signal descriptions . . . . . 17 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 www.DataSheet4U.com Address inputs (ADQ0-ADQ15, A16-Amax) . . . . ..

Features

■ Supply voltage
  – VDD = 1.7 V to 2 V for Program, Erase and Read
  – VDDQ = 1.7 V to 2 V for I/O buffers
  – VPP = 9 V for fast Program Multiplexed address/data Synchronous / Asynchronous Read
  – Synchronous Burst Read mode: 86 MHz
  – Random Access: 60 ns, 70 ns Synchronous Burst Read Suspend Programming time
  – 10 µs by Word typical for Factory Program
  – Double/Quadruple Word Program option
  – Enhanced Factory Program options Memory blocks
  – Multiple Bank memory array: 4 Mbit Banks
  – Parameter Blocks (top or bottom location) Dual operations
  – Program Erase in one Bank while Read in others
  – No dela.