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M58WR064EB |
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| Part Number | M58WR064EB |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | ..... . . . . . . . . . . 6 Figure 2. Logic Diagram.. . . . . ... |
| Features |
SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Package SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 70, 80, 100 ns FBGA s PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options VFBGA56 (ZB) 7.7 x 9 mm s MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top or Bottom location) s E... |
| Document |
 M58WR064EB Data Sheet
PDF 1.08MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | M58WR064ET |
ST Microelectronics |
64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory |
|
| 2 | M58WR064B |
STMicroelectronics |
FLASH MEMORY |
|
| 3 | M58WR064HB |
ST Microelectronics |
1.8 V supply Flash memories |
|
| 4 | M58WR064HT |
ST Microelectronics |
1.8 V supply Flash memories |
|
| 5 | M58WR064KB |
Micron |
64Mb Multi Bank Burst Flash memories |
|