KSC3073 |
Part Number | KSC3073 |
Manufacturer | Fairchild Semiconductor |
Description | KSC3073 KSC3073 Power Amplifier Application • Complement to KSA1243 1 I-PAK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise note... |
Features |
.5A VCE = 2V, IC = 2.5A IC = 2A, IB = 0.2A VCE = 2V,IC = 0.5A VCE = 2V, IC = 0.5A VCB = 10V, f =1MHz 70 25 0.3 0.75 100 35 Min. 30 5 1 1 240 0.8 1 V V MHz pF Typ. Max. Units V V µA µA
hFE Classification
Classification hFE1 O 70 ~ 140 Y 120 ~ 240
©2002 Fairchild Semiconductor Corporation
Rev. B, September 2002
KSC3073
Typical Characteristics
4.0
1000
3.5
IC[A], COLLECTOR CURRENT
2.5
IB=
20m
A
hFE, DC CURRENT GAIN
3.0
IB
=4
0m
A
3 A 0m
100
VCE = 2V
I B=
2.0
mA I B = 15
1.5
I B = 10mA
10
1.0
IB = 5mA
0.5
0.0 0.0
IB = 3mA IB = 0
0.8 1.6 2.4 3.2 4.0 4.8 5.6 6.4
1 1E-3... |
Document |
KSC3073 Data Sheet
PDF 40.87KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | KSC3074 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
2 | KSC3076 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
3 | KSC3114 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
4 | KSC3120 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
5 | KSC3125 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |