KSC3296 - Fairchild Semiconductor

KSC3296 NPN Epitaxial Silicon Transistor

KSC3296 KSC3296 Power Amplifier Applications • Complement to KSA1304 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Base Current Coll.

Features

V V MHz pF Units µA µA ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC3296 Typical Characteristics 1000 10 VCE(sat)[V], SATURATION VOLTAGE VCE = 10V IC = 10 IB hFE, DC CURRENT GAIN 100 1 10 0.1 1 0.01 0.1 1 10 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 10 25 IC MAX. (Pulse) m 10 IC[A], COLLECTOR CURRENT IC MAX. (DC) D 1 1s PC[W], POWER DISSIPATION 1000 20 0 10 m s m Li a ip iss tio n s S/b 15 d ite 10 0.1 VCEO MAX. Lim d ite 5 0.01.