KSC3265 KSC3265 Low Frequency Amplifier • Complement to KSA1298 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector.
mA, IB=20mA VCE=1V, IC=10mA VCE=5V, IC=10mA VCB=10V, IE=0, f=1MHz 0.5 120 13 100 40 Min. 25 5 100 100 320 0.4 0.8 V V MHz pF Typ. Max. Units V V nA nA
Cob
hFE Classification
Classification hFE O 100 ~ 200 Marking Y 160 ~ 320
K1O
hFE grade
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC3265
Package Dimensions
SOT-23
0.20 MIN 2.40
±0.10
0.40 ±0.03
1.30
±0.10
0.45~0.60
0.03~0.10 0.38 REF
0.40 ±0.03 0.96~1.14 2.90 ±0.10
0.12
–0.023
+0.05
0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF
0.97REF
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev.
SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package. / Features 。 Low frequency. / Applications 。.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSC321 |
ITT Industries |
(KSC Series) Tact Switch | |
2 | KSC321J |
ITT Industries |
(KSC Series) Sealed Tact Switch | |
3 | KSC3233 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
4 | KSC3296 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
5 | KSC3073 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
6 | KSC3074 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
7 | KSC3076 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
8 | KSC3114 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
9 | KSC3120 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
10 | KSC3125 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
11 | KSC341 |
ITT Industries |
(KSC Series) Tact Switch | |
12 | KSC341J |
ITT Industries |
(KSC Series) Sealed Tact Switch |