KDR582F - KEC

KDR582F SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR TECHNICAL DATA KDR582F SCHOTTKY BARRIER TYPE DIODE FOR HIGH SPEED SWITCHING. FEATURES hLow reverse current, low capacitance. hSuffix U : Qualified to AEC-Q101. ex) KDR582F-RTK/HU MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature VR.

Features

hLow reverse current, low capacitance. hSuffix U : Qualified to AEC-Q101. ex) KDR582F-RTK/HU MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature VR 5 V IO 10 mA IFSM 130 mA PD
* 100 mW Tj 150  Storage Temperature Range Tstg -55q150 
* Mounted on a glass epoxy circuit board of 20ƒ20ɘ, Pad Dimension of 4ƒ4ɘ CATHODE MARK C D B A H DIM MILLIMETERS A 1.00+_ 0.05 B 0.80+0.10/-0.05 C 0.60+_ 0.05 D 0.30+_ 0.05 E F E 0.40 MAX F 0.13+_ 0.05 G 0.10 MAX G .