SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY RECTIFICATION. SWITCHING REGULATORS, CONVERTERS, CHOPPERS. FEATURES Low Forward Voltage : VF max=0.4V. Low Leakage Current : IR max=500 A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current Non-Repetitive Peak Surge Current Junction Temperature Storage Te.
Low Forward Voltage : VF max=0.4V. Low Leakage Current : IR max=500 A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current Non-Repetitive Peak Surge Current Junction Temperature Storage Temperature Range SYMBOL VRRM VR IO IFSM Tj Tstg RATING 15 15 1 10 125 -55 125 UNIT V V A A A C F L G G KDR511T SCHOTTKY BARRIER TYPE DIODE E K B K 2 3 1 D DIM A B C D E F G H I J K L MILLIMETERS 2.9 +_0.2 1.6+0.2/-0.1 0.70+_ 0.05 0.4+_ 0.1 2.8+0.2/-0.3 1.9+_ 0.2 0.95 0.16+_ 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 I H J J 1. NC 2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KDR505S |
KEC |
Diode | |
2 | KDR521T |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
3 | KDR531T |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
4 | KDR552F |
KEC |
HIGH SPEED SWITCHING | |
5 | KDR582E |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
6 | KDR582F |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
7 | KDR582S |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
8 | KDR105 |
KEC |
Diode | |
9 | KDR105S |
KEC |
Diode | |
10 | KDR322 |
KEC |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE | |
11 | KDR331 |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
12 | KDR331E |
KEC |
SCHOTTKY BARRIER TYPE DIODE |