KDR582F |
Part Number | KDR582F |
Manufacturer | KEC |
Description | SEMICONDUCTOR TECHNICAL DATA KDR582F SCHOTTKY BARRIER TYPE DIODE FOR HIGH SPEED SWITCHING. FEATURES hLow reverse current, low capacitance. hSuffix U : Qualified to AEC-Q101. ex) KDR582F-RTK/HU MAXI... |
Features |
hLow reverse current, low capacitance. hSuffix U : Qualified to AEC-Q101.
ex) KDR582F-RTK/HU
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING UNIT
Reverse Voltage Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature
VR
5
V
IO
10
mA
IFSM
130
mA
PD*
100
mW
Tj
150
Storage Temperature Range
Tstg
-55q150
* Mounted on a glass epoxy circuit board of 2020ɘ, Pad Dimension of 44ɘ
CATHODE MARK
C
D
B A
H
DIM MILLIMETERS
A
1.00+_ 0.05
B 0.80+0.10/-0.05
C
0.60+_ 0.05
D
0.30+_ 0.05
E
F
E
0.40 MAX
F
0.13+_ 0.05
G
0.10 MAX
G
... |
Document |
KDR582F Data Sheet
PDF 104.19KB |
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