SEMICONDUCTOR TECHNICAL DATA FOR HIGH SPEED SWITCHING. KDR552F SCHOTTKY BARRIER TYPE DIODE FEATURES Low reverse current, Low capacitance. Small Package : TFSC. CATHODE MARK D C B A MAXIMUM RATING (Ta=25 CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current ) SYMBOL VRRM VR IO IFSM Tj Tstg RATING 25 25 50 200 125 -55 1.
Low reverse current, Low capacitance. Small Package : TFSC. CATHODE MARK D C B A MAXIMUM RATING (Ta=25 CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current ) SYMBOL VRRM VR IO IFSM Tj Tstg RATING 25 25 50 200 125 -55 125 UNIT V F E DIM A B C D E F MILLIMETERS _ 0.05 1.00 + 0.80+0.10/-0.05 _ 0.05 0.60 + _ 0.05 0.30 + 0.40 MAX _ 0.05 0.13 + V mA mA 1. ANODE 2. CATHODE Non-repetitive Peak Surge Current (10mS) Junction Temperature Storage Temperature Range TFSC Marking Type Name www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC F.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KDR505S |
KEC |
Diode | |
2 | KDR511T |
KEC |
Diode | |
3 | KDR521T |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
4 | KDR531T |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
5 | KDR582E |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
6 | KDR582F |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
7 | KDR582S |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
8 | KDR105 |
KEC |
Diode | |
9 | KDR105S |
KEC |
Diode | |
10 | KDR322 |
KEC |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE | |
11 | KDR331 |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
12 | KDR331E |
KEC |
SCHOTTKY BARRIER TYPE DIODE |