KDR582S - KEC

KDR582S SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR TECHNICAL DATA FOR HIGH SPEED SWITCHING. KDR582S SCHOTTKY BARRIER TYPE DIODE FEATURES ¡⁄ Low reverse current, low capacitance. L E B L 2 A G H 1 3 MAXIMUM RATING (Ta=25¡ CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Forward Current Junction Temperature Storage Temperature Range ) SYMBOL VR VR IF Tj Tstg RATING 4 4 130 150.

Features

¡⁄ Low reverse current, low capacitance. L E B L 2 A G H 1 3 MAXIMUM RATING (Ta=25¡ CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Forward Current Junction Temperature Storage Temperature Range ) SYMBOL VR VR IF Tj Tstg RATING 4 4 130 150 ¡ ¡ -55¡› 150 UNIT P P V C N V mA M K DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 SOT-23 Marking Lot No. Type Name MC www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (Ta=25¡ CHARACTERISTIC ) T.