SEMICONDUCTOR TECHNICAL DATA KDR331 SCHOTTKY BARRIER TYPE DIODE HIGH SPEED SWITCHING. FEATURES Low Forward Voltage : VF=0.25(Typ.) @IF=5mA Small Package : USM. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junctio.
Low Forward Voltage : VF=0.25(Typ.) @IF=5mA Small Package : USM.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range
* : Unit Rating. Total Rating=Unit Rating 1.5
VRM VR IFM IO IFSM PD Tj Tstg Topr
RATING 15 10
100
* 50
* 1
* 100 125 -55 125 -40 100
UNIT V V mA mA A mW
C L
A J G
E MB
M
2 13
NK
N
1. ANODE 1 2. ANODE 2 3. CATHODE
DIM MILLIMETERS
DA B
2.00+_ 0.20 1.25 +_ 0..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KDR331E |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
2 | KDR331V |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
3 | KDR322 |
KEC |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE | |
4 | KDR357 |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
5 | KDR367 |
KEC |
DIODE | |
6 | KDR367E |
KEC |
SCHOTTKY BARRIER TYPE DIODE | |
7 | KDR368 |
KEC |
DIODE | |
8 | KDR368E |
KEC |
DIODE | |
9 | KDR377 |
KEC |
Diode | |
10 | KDR377E |
KEC |
Diode | |
11 | KDR378 |
KEC |
Diode | |
12 | KDR378E |
KEC |
SCHOTTKY BARRIER TYPE DIODE |