KDR582E - KEC

KDR582E SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR TECHNICAL DATA FOR HIGH SPEED SWITCHING. FEATURES Low reverse current, low capacitance. Small package : ESC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage VR 4 V Reverse Voltage VR 4 V Forward Current IF 130 mA Power Dissipation PD* 150 mW Junction Temperature Tj 150 Storage Tem.

Features

Low reverse current, low capacitance. Small package : ESC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage VR 4 V Reverse Voltage VR 4 V Forward Current IF 130 mA Power Dissipation PD
* 150 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150
* Mounted on a glass epoxy circuit board of 20 20 , Pad Dimension of 4 4 KDR582E SCHOTTKY BARRIER TYPE DIODE CATHODE MARK B A C 1 2 D 1. ANODE 2. CATHODE E F DIM A B C D E F MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 ESC Ma.