JAN2N5416 - Microsemi Corporation

JAN2N5416 (JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR

TECHNICAL DATA PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/485 Devices 2N5415 2N5415S 2N5416 2N5416S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C @ TC = +250C Operating & Storage Temperature Range Symbol .

Features

ase Cutoff Current VEB = 6.0 Vdc Collector-Emitter Cutoff Current VCE = 200 Vdc, VBE = 1.5 Vdc VCE = 300 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 175 Vdc VCB = 280 Vdc Collector-Base Cutoff Current VCB = 200 Vdc VCB = 350 Vdc 2N5415 2N5415 2N5416 2N5416 50 1.0 50 1.0 20 50 50 50 50 500 500 µAdc mAdc µAdc mAdc µAdc µAdc µAdc µAdc ICEO IEBO 2N5415 2N5416 2N5415 2N5416 2N5415 2N5416 ICEX ICBO1 ICBO2 µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N5415, 2N5416 JAN, SERIES ELECTRICAL CHARACTERISTICS (con’t) Cha.