JAN2N1711 - Microsemi Corporation

JAN2N1711 NPN LOW POWER SILICON TRANSISTOR

TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices www.DataSheet4U.com Qualified Level 2N1890 JAN JANTX 2N1711 MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCBO VEBO IC PT TJ, Tstg Symbol ZθJX 2N1711 75 2N1890 100 Unit Vdc Vdc mAdc W W 0 C Unit.

Features

Collector-Base Cutoff Current VCB = 60 Vdc VCB = 80 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N1711, S 2N1890, S 2N1711, S 2N1890, S 2N1711, S 2N1890, S V(BR)CBO 75 100 50 80 30 60 7.0 10 10 5.0 Vdc V(BR)CER Vdc V(BR)CEO Vdc V(BR)EBO 2N1711 2N1890 ICBO IEBO Vdc ηAdc ηAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N1711, 2N1890 JAN SERIES Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 10 µAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 500 mAdc, VCE = 10 Vdc Coll.