JAN2N559-1 - Motorola

JAN2N559-1 PNP Transistor

·2N554 (GERMANIUM) 2N555 For Specifications, See 2N178 Data. JAN 2N559-1 (GERMANIUM) JAN 2N559-2 JAN 2N559-3* PNP germanium mesa transistors designed for military and industrial high-reliability, high-speed switching applications. CASE 22 (TO-18) Collector connected to case MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-.

Features

ITY LEVELS Failure Maximum failure rate (x) during first Rate in 1000 hours with 90% confidence. Conserva- Reliability Operation Life Storage Life tively Designed Level PD = 150 mW Equipment Indi- Group A cafor Subgroups Group B Subgroups IE=50 mA TA = 25°C TA = 100°C TA=150°C %/1000 Hrs Major Minor Major Minor Major Minor Major Minor Major Minor Defect Defect Defect Defect Defect Defect Defect Defect Defect Defect (1) 3.0 5.0 10 20 10 20 10 20 20 - 0.1 (2) 1.5 3.0 5.0 15 5.0 15 1.5 3.0 7.0 20 0.01 (3)
* 1.0 2.0 3.0 7.0 2.0 5.0 0.2 0.5 1.0 3.0.