JAN2N5416 |
Part Number | JAN2N5416 |
Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
Description | TECHNICAL DATA PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/485 Devices 2N5415 2N5415S 2N5416 2N5416S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltag... |
Features |
ase Cutoff Current VEB = 6.0 Vdc Collector-Emitter Cutoff Current VCE = 200 Vdc, VBE = 1.5 Vdc VCE = 300 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 175 Vdc VCB = 280 Vdc Collector-Base Cutoff Current VCB = 200 Vdc VCB = 350 Vdc 2N5415 2N5415 2N5416 2N5416 50 1.0 50 1.0 20 50 50 50 50 500 500 µAdc mAdc µAdc mAdc µAdc µAdc µAdc µAdc
ICEO
IEBO 2N5415 2N5416 2N5415 2N5416 2N5415 2N5416 ICEX
ICBO1
ICBO2
µAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101 Page 1 of 2
2N5415, 2N5416 JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Cha... |
Document |
JAN2N5416 Data Sheet
PDF 67.52KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | JAN2N5415 |
Microsemi Corporation |
(JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR | |
2 | JAN2N5038 |
Microsemi Corporation |
(JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR | |
3 | JAN2N5039 |
Microsemi Corporation |
(JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR | |
4 | JAN2N559-1 |
Motorola |
PNP Transistor | |
5 | JAN2N559-2 |
Motorola |
PNP Transistor |