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www.DataSheet4U.com TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/464 Devices 2N5685 2N5686 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg 2N5685 2N5686 Un.
off Current VCE = 60 Vdc, VBE = 1.5 Vdc VCE = 80 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 80 Vdc 2N5685 2N5686 2N5685 2N5686 2N5685 2N5686 2N5685 2N5686 V(BR)CEO 60 80 500 500 500 500 2.0 2.0 Vdc ICEO µAdc ICEX µAdc ICBO mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 www.DataSheet4U.com 2N5685, 2N5686 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Emitter-Base Cutoff Current VEB = 5.0 Vdc Symbol IEBO Min. Max. 1.0 Unit mAdc ON CHARACTERISTICS (2) Forward-Current Transfer Ratio.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | JAN2N5683 |
Microsemi Corporation |
(JAN2N5683 / JAN2N5684) NPN POWER SILICON TRANSISTOR |
|
| 2 | JAN2N5684 |
Microsemi Corporation |
(JAN2N5683 / JAN2N5684) NPN POWER SILICON TRANSISTOR |
|
| 3 | JAN2N5685 |
Microsemi Corporation |
(JAN2N5685 / JAN2N5686) NPN POWER SILICON TRANSISTOR |
|
| 4 | JAN2N5038 |
Microsemi Corporation |
(JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR |
|
| 5 | JAN2N5039 |
Microsemi Corporation |
(JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR |
|
| 6 | JAN2N5415 |
Microsemi Corporation |
(JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR |
|
| 7 | JAN2N5416 |
Microsemi Corporation |
(JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR |
|
| 8 | JAN2N559-1 |
Motorola |
PNP Transistor |
|
| 9 | JAN2N559-2 |
Motorola |
PNP Transistor |
|
| 10 | JAN2N559-3 |
Motorola |
PNP Transistor |
|
| 11 | JAN2N1711 |
Microsemi Corporation |
NPN LOW POWER SILICON TRANSISTOR |
|
| 12 | JAN2N1870A |
Microsemi Corporation |
SCRs 1.25 Amp/ Planear |
|