JAN2N5683 - Microsemi Corporation

JAN2N5683 (JAN2N5683 / JAN2N5684) NPN POWER SILICON TRANSISTOR

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/466 Devices 2N5683 2N5684 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation (1) Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC 2N5683 60 60 2N5684 .

Features

VBE = 1.5 Vdc VCE = 80 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 80 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N5683 2N5684 2N5683 2N5684 2N5683 2N5684 2N5683 2N5684 V(BR)CEO 60 80 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Vdc ICEO µAdc ICEX µAdc ICBO IEBO µAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N5683, 2N5684 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 5.0 Adc, VCE = 2.0 Vdc IC = 25 Adc, VCE .