·2N554 (GERMANIUM) 2N555 For Specifications, See 2N178 Data. JAN 2N559-1 (GERMANIUM) JAN 2N559-2 JAN 2N559-3* PNP germanium mesa transistors designed for military and industrial high-reliability, high-speed switching applications. CASE 22 (TO-18) Collector connected to case MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-.
ITY LEVELS
Failure
Maximum failure rate (x) during first
Rate in
1000 hours with 90% confidence.
Conserva-
Reliability
Operation Life
Storage Life
tively Designed
Level
PD = 150 mW
Equipment
Indi-
Group A
cafor Subgroups
Group B Subgroups
IE=50 mA TA = 25°C
TA = 100°C
TA=150°C
%/1000 Hrs
Major Minor Major Minor Major Minor Major Minor Major Minor Defect Defect Defect Defect Defect Defect Defect Defect Defect Defect
(1)
3.0
5.0
10
20
10
20
10
20
20
-
0.1
(2)
1.5
3.0
5.0
15
5.0 15
1.5
3.0
7.0
20
0.01
(3)
*
1.0
2.0
3.0 7.0
2.0 5.0 0.2
0.5
1.0
3.0.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | JAN2N559-1 |
Motorola |
PNP Transistor | |
2 | JAN2N559-2 |
Motorola |
PNP Transistor | |
3 | JAN2N5038 |
Microsemi Corporation |
(JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR | |
4 | JAN2N5039 |
Microsemi Corporation |
(JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR | |
5 | JAN2N5415 |
Microsemi Corporation |
(JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR | |
6 | JAN2N5416 |
Microsemi Corporation |
(JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR | |
7 | JAN2N5683 |
Microsemi Corporation |
(JAN2N5683 / JAN2N5684) NPN POWER SILICON TRANSISTOR | |
8 | JAN2N5684 |
Microsemi Corporation |
(JAN2N5683 / JAN2N5684) NPN POWER SILICON TRANSISTOR | |
9 | JAN2N5685 |
Microsemi Corporation |
(JAN2N5685 / JAN2N5686) NPN POWER SILICON TRANSISTOR | |
10 | JAN2N5686 |
Microsemi Corporation |
(JAN2N5685 / JAN2N5686) NPN POWER SILICON TRANSISTOR | |
11 | JAN2N1711 |
Microsemi Corporation |
NPN LOW POWER SILICON TRANSISTOR | |
12 | JAN2N1870A |
Microsemi Corporation |
SCRs 1.25 Amp/ Planear |