Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTA12N65X2 IXTP12N65X2 IXTH12N65X2 VDSS = ID25 = RDS(on) 650V 12A 300m TO-263 AA (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum.
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5
• ID25, Note 1
Characteristic Values
Min. Typ.
Max.
650 V
2.5 4.5 V
100 nA
5 A 50 A
300 m
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters
PFC Circui.
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static drain-source on-resistance: .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTH12N100 |
IXYS Corporation |
MOSFET | |
2 | IXTH12N120 |
IXYS |
Power MOSFET | |
3 | IXTH12N70X2 |
IXYS |
Power MOSFET | |
4 | IXTH12N70X2 |
INCHANGE |
N-Channel MOSFET | |
5 | IXTH12N90 |
INCHANGE |
N-Channel MOSFET | |
6 | IXTH102N15T |
IXYS |
Power MOSFET | |
7 | IXTH102N15T |
INCHANGE |
N-Channel MOSFET | |
8 | IXTH102N20T |
IXYS |
Power MOSFET | |
9 | IXTH102N20T |
INCHANGE |
N-Channel MOSFET | |
10 | IXTH10N100 |
IXYS Corporation |
MOSFET | |
11 | IXTH10P50 |
IXYS Corporation |
P-Channel MOSFET | |
12 | IXTH110N10L2 |
INCHANGE |
N-Channel MOSFET |