IXTH102N20T - INCHANGE

IXTH102N20T N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor .

Features

·Drain Source Voltage- : VDSS= 200V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max)
·Fast Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switch-Mode and Resonant-Mode Power Supplies
·DC-DC Converters
·AC and DC Motor Drives
·Robotics and Servo Controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 102 A IDM Drain Current-Single Plused 250 A PD Total Dissipat.