IXTH12N120 - IXYS

IXTH12N120 Power MOSFET

Power MOSFET, Avalanche Rated High Voltage Preliminary Data Sheet IXTH 12N120 VDSS = 1200 V ID (cont) = 12 A RDS(on)= 1.4 Ω Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EEAARS PD TJ TJM Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TTCC = 25°C = 25°C .

Features

z International standard package JEDEC TO-247 AD z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Fast switching times Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 µA 1200 3 VGS = ±30 VDC, VDS = 0 VVGDSS = = 0VDVSS TTJJ = = 25°C 125°C PVGuSlse= 10 V, test, t ID ≤ 3=000.5µ
•s,IDd25uty cycle d ≤ 2 % V 5V ±100 nA 25 µA 3 mA 1.4 Ω Applications z Switch-mode and resonant-mode power supplies z Motor controls z Uninterruptible Po.