IXTH12N70X2 - IXYS

IXTH12N70X2 Power MOSFET

Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTA12N70X2 IXTP12N70X2 IXTH12N70X2 VDSS = ID25 =  RDS(on) 700V 12A 300m TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum .

Features

 International Standard Packages
 Low RDS(ON) and QG
 Avalanche Rated
 Low Package Inductance Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5
• ID25, Note 1 Characteristic Values Min. Typ. Max. 700 V 2.5 4.5 V 100 nA 5 A 75 A 300 m Advantages
 High Power Density
 Easy to Mount
 Space Savings Applications
 Switch-Mode and Resonant-Mode Power Supplies
 DC-DC Converters
 PFC Cir.