IXTH12N65X2 |
Part Number | IXTH12N65X2 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static drain-source on-resistance: RDS(on) ≤ 300mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100%... |
Features |
·Drain Source Voltage- : VDSS= 650V(Min) ·Static drain-source on-resistance: RDS(on) ≤ 300mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pulsed 24 A PD Total Dissipation @TC=25℃ 180 W Tj Operating Junction Te... |
Document |
IXTH12N65X2 Data Sheet
PDF 334.99KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTH12N65X2 |
IXYS |
Power MOSFET | |
2 | IXTH12N100 |
IXYS Corporation |
MOSFET | |
3 | IXTH12N120 |
IXYS |
Power MOSFET | |
4 | IXTH12N70X2 |
IXYS |
Power MOSFET | |
5 | IXTH12N70X2 |
INCHANGE |
N-Channel MOSFET |