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Advance Technical Information LinearL2TM Power MOSFET w/ Extended FBSOA IXTH110N10L2 IXTT110N10L2 VDSS = 100V ID25 = 110A ≤ RDS(on) 18mΩ N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ .
z Designed for Linear Operation z International Standard Packages z Avalanche Rated z Integrated Gate Resistor for Easy
Paralleling z Guaranteed FBSOA at 75°C
Advantages
z Easy to Mount z Space Savings z High Power Density
Applications
z Solid State Circuit Breakers z Soft Start Controls z Linear Amplifiers z Programmable Loads z Current Regulators
© 2010 IXYS CORPORATION, All Rights Reserved
DS100235(01/10)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5
• ID25, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
RGi
Gate Input Resistance
td(.
IXTH110N10L2 - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·Fully characteriz.
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