Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS(on) IXTH/IXTT 10P50 IXTH/IXTT 11P50 -500 V -10 A 0.90 Ω -500 V -11 A 0.75 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited.
z z z z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. -500 0.054 -3.0 -0.122 ± 100 TJ = 25 ° C TJ = 125 ° C -200 -1 -5.0 V %/K V %/K nA µA mA
z
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
VDSS VGS(th) IGSS IDSS RDS(on)
V GS = 0 V, ID = -250 µA BVDSS Temperature Coefficient V DS = VGS, ID = -250 µA VGS(th) Temperature Coefficient V GS = ±20 VDC, VDS = 0 V DS = 0.8
• VDSS V GS = 0 V V G.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTH102N15T |
IXYS |
Power MOSFET | |
2 | IXTH102N15T |
INCHANGE |
N-Channel MOSFET | |
3 | IXTH102N20T |
IXYS |
Power MOSFET | |
4 | IXTH102N20T |
INCHANGE |
N-Channel MOSFET | |
5 | IXTH10N100 |
IXYS Corporation |
MOSFET | |
6 | IXTH110N10L2 |
INCHANGE |
N-Channel MOSFET | |
7 | IXTH110N10L2 |
IXYS |
Power MOSFET | |
8 | IXTH11N80 |
IXYS |
MegaMOS FET | |
9 | IXTH11N80 |
INCHANGE |
N-Channel MOSFET | |
10 | IXTH11P50 |
IXYS Corporation |
P-Channel MOSFET | |
11 | IXTH12N100 |
IXYS Corporation |
MOSFET | |
12 | IXTH12N120 |
IXYS |
Power MOSFET |