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IXTC26N50P |
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| Part Number | IXTC26N50P |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IXTC26N50P ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 260mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot ... |
| Features |
·Drain Source Voltage- : VDSS= 500V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 260mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 78 PD Total Dissipation @TC=25℃ 100 Tj Operating Junction Temperature -55~150 Tstg Storage T... |
| Document |
 IXTC26N50P Data Sheet
PDF 247.63KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTC26N50P |
IXYS Corporation |
PolarHV Power MOSFET |
|
| 2 | IXTC200N075T |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTC200N085T |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IXTC200N085T |
IXYS Corporation |
Power MOSFET |
|
| 5 | IXTC200N10T |
INCHANGE |
N-Channel MOSFET |
|