IXTC240N055T |
Part Number | IXTC240N055T |
Manufacturer | IXYS Corporation |
Description | Preliminary Technical Information TrenchMVTM IXTC240N055T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 132 4.0 V A mΩ... |
Features |
Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature
Advantages Easy to mount Space savings High power density
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 1 mA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 50 A, Note 1
Characteristic Values Min. Typ. Max. 55 V
2.0 4.0 V
± 200 nA
5 μA 250 μA 4.0 mΩ
Applications Automotive - Motor Drives - High Side Switch - 12V Battery
-... |
Document |
IXTC240N055T Data Sheet
PDF 181.48KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTC240N055T |
INCHANGE |
N-Channel MOSFET | |
2 | IXTC200N075T |
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N-Channel MOSFET | |
3 | IXTC200N085T |
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N-Channel MOSFET | |
4 | IXTC200N085T |
IXYS Corporation |
Power MOSFET | |
5 | IXTC200N10T |
INCHANGE |
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