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IGBT with Diode Combi Pack Short Circuit SOA Capability IXSK 50N60AU1 VCES IC25 VCE(sat) = 600 V = 75 A = 2.7 V www.DataSheet4U.com Symbol V CES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient T C = 25°C, limited by leads T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 3.
q q q q q Mounting torque 0.9/6 Nm/lb.in. 10 300 g °C q q Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s International standard package JEDEC TO-264 AA Guaranteed Short Circuit SOA capability High frequency IGBT and antiparallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) min. typ. max. 600 4 TJ =.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXSK50N60BU1 |
IXYS Corporation |
IGBT |
|
| 2 | IXSK30N60BD1 |
IXYS Corporation |
High Speed IGBT |
|
| 3 | IXSK30N60CD1 |
IXYS Corporation |
Short Circuit SOA Capability |
|
| 4 | IXSK35N120AU1 |
IXYS Corporation |
High Voltage IGBT |
|
| 5 | IXSK35N120BD1 |
IXYS Corporation |
HIGH VOLTAGE IGBT WITH DIODE |
|
| 6 | IXSK40N60CD1 |
IXYS Corporation |
IGBT |
|
| 7 | IXSK80N60B |
IXYS Corporation |
High Current IGBT Short Circuit SOA Capability |
|
| 8 | IXSA10N60B2D1 |
IXYS Corporation |
High Speed IGBT |
|
| 9 | IXSA15N120B |
IXYS Corporation |
High Voltage IGBT |
|
| 10 | IXSA16N60 |
IXYS Corporation |
Short Circuit SOA Capability |
|
| 11 | IXSA20N60B2D1 |
IXYS Corporation |
High Speed IGBT |
|
| 12 | IXSH10N60B2D1 |
IXYS |
High-Speed IGBT |
|