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High Voltage IGBT with Diode Combi Pack Short Circuit SOA Capability IXSK35N120AU1 VCES IC25 VCE(sat) = 1200 V = 70 A = 4V www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, .
• International standard package JEDEC TO-264 AA
• High frequency IGBT and anti-parallel FRED in one package
• 2nd generation HDMOSTM process
• Low VCE(sat) - for minimum on-state conduction losses
• MOS Gate turn-on - drive simplicity
• Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications
1.6 mm (0.063 in) from case for 10 s Mounting torque
300 1.15/13 10
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4 TJ = 25°C TJ = 125°C 8 750 15 ±100 4 V V mA mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 5 mA, V.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXSK35N120BD1 |
IXYS Corporation |
HIGH VOLTAGE IGBT WITH DIODE |
|
| 2 | IXSK30N60BD1 |
IXYS Corporation |
High Speed IGBT |
|
| 3 | IXSK30N60CD1 |
IXYS Corporation |
Short Circuit SOA Capability |
|
| 4 | IXSK40N60CD1 |
IXYS Corporation |
IGBT |
|
| 5 | IXSK50N60AU1 |
IXYS Corporation |
IGBT |
|
| 6 | IXSK50N60BU1 |
IXYS Corporation |
IGBT |
|
| 7 | IXSK80N60B |
IXYS Corporation |
High Current IGBT Short Circuit SOA Capability |
|
| 8 | IXSA10N60B2D1 |
IXYS Corporation |
High Speed IGBT |
|
| 9 | IXSA15N120B |
IXYS Corporation |
High Voltage IGBT |
|
| 10 | IXSA16N60 |
IXYS Corporation |
Short Circuit SOA Capability |
|
| 11 | IXSA20N60B2D1 |
IXYS Corporation |
High Speed IGBT |
|
| 12 | IXSH10N60B2D1 |
IXYS |
High-Speed IGBT |
|