IXSK30N60BD1 - IXYS Corporation

IXSK30N60BD1 High Speed IGBT

High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 VCES IC25 VCE(sat) Short Circuit SOA Capability tfi = 600 V = 55 A = 2.0 V = 140 ns www.DataSheet4U.com Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamp.

Features

• International standard packages: JEDEC TO-247, TO-264& TO-268
• Short Circuit SOA capability
• Medium freqeuncy IGBT and antiparallel FRED in one package
• New generation HDMOSTM process Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode power supplies Advantages
• Space savings (two devices in one package)
• Easy to mount with 1 screw (isolated mounting screw hole)
• Surface mountable, high power case style
• Reduces assembly time and cost
• High power density Symbol Test Conditions Charac.