isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 45mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·Uninterruptible power supplies ·ABSOLUTE MAXIMUM RATING.
·Static drain-source on-resistance:
RDS(on) ≤ 45mΩ@VGS=10V
·Fully characterized avalanche voltage and current
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·Switched mode power supplies
·Uninterruptible power supplies
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
70
A
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rt.
IXKH 70N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D I.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXKH20N60C5 |
IXYS |
Power MOSFET | |
2 | IXKH20N60C5 |
INCHANGE |
N-Channel MOSFET | |
3 | IXKH24N60C5 |
IXYS |
CoolMOS Power MOSFET | |
4 | IXKH24N60C5 |
INCHANGE |
N-Channel MOSFET | |
5 | IXKH30N60C5 |
IXYS |
Power MOSFET | |
6 | IXKH30N60C5 |
INCHANGE |
N-Channel MOSFET | |
7 | IXKH35N60C5 |
INCHANGE |
N-Channel MOSFET | |
8 | IXKH35N60C5 |
IXYS |
Power MOSFET | |
9 | IXKH47N60C |
IXYS |
Power MOSFET | |
10 | IXKH47N60C |
INCHANGE |
N-Channel MOSFET | |
11 | IXKC13N80C |
IXYS Corporation |
CoolMOS Power MOSFET | |
12 | IXKC13N80C |
INCHANGE |
N-Channel MOSFET |