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IXKH 24N60C5 IXKP 24N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge Preliminary data ID25 = 24 A VDSS = 600 V RDS(on) max = 0.165 Ω D TO-247 AD (IXKH) G S G D S TO-220 AB (IXKP) q D(TAB) MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse.
• fast CoolMOS™ 1) power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness
• Enhanced total power density
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
1) CoolMOS™ is a trademark of Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved
20080523c
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Source-D.
IXKH24N60C5 - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 0.165Ω@VGS=10V ·Fully character.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXKH20N60C5 |
IXYS |
Power MOSFET |
|
| 2 | IXKH20N60C5 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXKH30N60C5 |
IXYS |
Power MOSFET |
|
| 4 | IXKH30N60C5 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXKH35N60C5 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IXKH35N60C5 |
IXYS |
Power MOSFET |
|
| 7 | IXKH47N60C |
IXYS |
Power MOSFET |
|
| 8 | IXKH47N60C |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IXKH70N60C5 |
IXYS |
Power MOSFET |
|
| 10 | IXKH70N60C5 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IXKC13N80C |
IXYS Corporation |
CoolMOS Power MOSFET |
|
| 12 | IXKC13N80C |
INCHANGE |
N-Channel MOSFET |
|