IXKH20N60C5 - IXYS

IXKH20N60C5 Power MOSFET

IXKH 20N60C5 IXKP 20N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D ID25 = 20 A VDSS = 600 V RDS(on) max = 0.2 Ω TO-247 AD (IXKH) G G D S S q D(TAB) TO-220 AB (IXKP) G D S MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Symbol TC = 25°C TC = 90°C single pulse repetitive ID = 6.6 A; TC = 25°.

Features

• fast CoolMOS™ 1) power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness
• Enhanced total power density Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter MOSFET dV/dt ruggedness VDS = 0...480 V Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. 180 2.5 TVJ = 25°C TVJ = 125°C 3 10 100 1520 72 32 8 11 10 5 .