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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 100mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·Uninterruptible power supplies ·ABSOLUTE MAXIMUM RATIN.
·Static drain-source on-resistance:
RDS(on) ≤ 100mΩ@VGS=10V
·Fully characterized avalanche voltage and current
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·Switched mode power supplies
·Uninterruptible power supplies
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
35
A
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R.
IXKH35N60C5 - IXYS
IXKH 35N60C5 COOLMOS® * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D G.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXKH30N60C5 |
IXYS |
Power MOSFET |
|
| 2 | IXKH30N60C5 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXKH20N60C5 |
IXYS |
Power MOSFET |
|
| 4 | IXKH20N60C5 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXKH24N60C5 |
IXYS |
CoolMOS Power MOSFET |
|
| 6 | IXKH24N60C5 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IXKH47N60C |
IXYS |
Power MOSFET |
|
| 8 | IXKH47N60C |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IXKH70N60C5 |
IXYS |
Power MOSFET |
|
| 10 | IXKH70N60C5 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IXKC13N80C |
IXYS Corporation |
CoolMOS Power MOSFET |
|
| 12 | IXKC13N80C |
INCHANGE |
N-Channel MOSFET |
|